PART |
Description |
Maker |
TC511664BZ TC511664B |
65536 word x 16 bit DRAM 65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32 65536-word x 8-bit High Speed CMOS Static RAM 65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
M5M5165FP-10 M5M5165FP-10L M5M5165FP-12 M5M5165FP- |
65536-BIT (8192-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
HM62864 |
65536-word 8-bit High Speed CMOS Static RAM 65536-word 8-bit High Speed CMOS Static RAM 65536-word ? 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc. ETC
|
CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
HM6709A HM6709AJP-15 HM6709AJP-20 |
65536-WORD 4 BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY
|
Hitachi Semiconductor
|
HN27512P-25 |
EPROM, 65536-Word, 8-Bit One Time Electrically Programmable Read Only Memory
|
Renesas Technology / Hitachi Semiconductor
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|